NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device...

  • Main
  • 2019
  • NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device...
IEEE Transactions on Electron Devices 2019

NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability

Berens, Judith, Pobegen, Gregor, Rescher, Gerald, Aichinger, Thomas, Grasser, Tibor
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2019
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2941723
File:
PDF, 2.00 MB
2019
Conversion to is in progress
Conversion to is failed