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Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions
Zegrya, G. G., Ulin, V. P., Zegrya, A. G., Ulin, N. V., Mikhailov, Yu. M.Volume:
64
Language:
english
Journal:
Technical Physics
DOI:
10.1134/S1063784219100268
Date:
October, 2019
File:
PDF, 575 KB
english, 2019