Temperature dependency of the intrinsic carrier density of...

Journal of Solid State Electrochemistry 1999 / 07 Vol. 3; Iss. 5

Temperature dependency of the intrinsic carrier density of hydrogenated amorphous silicon in MOS structures

W. R. Fahrner, G. Grabosch, D. Borchert, Y. Chan, S. Kwong, K. Man
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Volume:
3
Language:
english
Pages:
6
DOI:
10.1007/s100080050154
Date:
July, 1999
File:
PDF, 186 KB
english, 1999
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