Modeling of the Variation of Lateral Doping (VLD) Lateral...

IEEE Journal of the Electron Devices Society 2019 Vol. 7

Modeling of the Variation of Lateral Doping (VLD) Lateral Power Devices via 1-D Analysis Using Effective Concentration Profile Concept

Zhang, Jun, Guo, Yu-Feng, Yang, Ke-Meng, Huang, Chen-Yang, Hu, Fang-Ren
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Volume:
7
Year:
2019
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2019.2942188
File:
PDF, 1.19 MB
english, 2019
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