Investigation of 5-nm-Thick Hf 0.5 Zr 0.5 O 2 Ferroelectric FinFET Dimensions for Sub-60-mV/Decade Subthreshold Slope
Tsai, Meng-Ju, Chen, Pin-Jui, Ruan, Dun-Bao, Hou, Fu-Ju, Peng, Po-Yang, Chen, Liu-Gu, Wu, Yung-ChunVolume:
7
Year:
2019
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2019.2942381
File:
PDF, 4.38 MB
english, 2019