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Curing of Hot-Carrier Induced Damage by Gate-Induced Drain Leakage Current in Gate-All-Around FETs
Park, Jun-Young, Yun, Dae-Hwan, Choi, Yang-KyuYear:
2019
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2019.2946393
File:
PDF, 735 KB
english, 2019