[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Influence of Accurate Electron Drift Velocity Modelling on the Electrical Characteristics in GaN-on-Si HEMTs

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