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Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications
Murugapandiyan, P., Mohanbabu, A., Lakshmi, V. Rajya, Wasim, Mohammed, Sundaram, K. MeenakshiJournal:
Journal of Electronic Materials
DOI:
10.1007/s11664-019-07731-4
Date:
October, 2019
File:
PDF, 1.28 MB
2019