Electrical properties of the HfO 2...

Semiconductor Science and Technology 2019 / 10 Vol. 34; Iss. 10

Electrical properties of the HfO 2 /Al 2 O 3 dielectrics stacked using single- and dual-temperature atomic-layer deposition processes on In 0.53 Ga 0.47 As

Lee, Changmin, Choi, Sungho, An, Youngseo, An, Byeong-Seon, Lee, Woohui, Oh, Wan, Eom, Deokjoon, Lee, Jehoon, Yang, Cheol-Woong, Kim, Hyoungsub
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Volume:
34
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab3bec
Date:
October, 2019
File:
PDF, 1.10 MB
english, 2019
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