Charge trapping memory device based on the Ga...

Chinese Physics B 2019 / 09 Vol. 28; Iss. 10

Charge trapping memory device based on the Ga 2 O 3 films as trapping and blocking layer

Bai, Bing, Wang, Hong, Li, Yan, Hao, Yunxia, Zhang, Bo, Wang, Boping, Wang, Zihang, Yang, Hongqi, Gao, Qihang, Lü, Chao, Zhang, Qingshun, Yan, Xiaobing
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Volume:
28
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/ab3e62
Date:
September, 2019
File:
PDF, 3.11 MB
english, 2019
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