Review of Si IGBT and SiC MOSFET based on hybrid switch

Chinese Journal of Electrical Engineering 2019 / 9 Vol. 5; Iss. 3

Review of Si IGBT and SiC MOSFET based on hybrid switch

Ning, Puqi, Yuan, Tianshu, Kang, Yuhui, Han, Cao, Li, Lei
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Volume:
5
Language:
english
Journal:
Chinese Journal of Electrical Engineering
DOI:
10.23919/CJEE.2019.000017
Date:
September, 2019
File:
PDF, 1.20 MB
english, 2019
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