High-performance and self-rectifying resistive random...

Applied Physics Express 2019 / 12 Vol. 12; Iss. 12

High-performance and self-rectifying resistive random access memory based on SnO 2 nanorod array: ZnO nanoparticle structure

Liu, Qi, Li, Yang, Wang, Wenxiao, Yue, Wenjing, Gao, Song, Zhang, Chunwei, Cao, Bingqiang, Chen, Zhenxiang
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Volume:
12
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/1882-0786/ab4d30
Date:
December, 2019
File:
PDF, 1.18 MB
english, 2019
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