Crystallization annealing effects on ferroelectric properties of Al-Doped HfO2 thin film capacitors using indium–tin–oxide electrodes
Ryu, Tae-Hyun, Yoon, So-Jung, Na, So-Yeong, Yoon, Sung-MinVolume:
19
Language:
english
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2019.09.003
Date:
December, 2019
File:
PDF, 1.56 MB
english, 2019