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[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - TCAD Simulations Combined with Free Carrier Absorption Experiments Revealing the Physical Nature of Hydrogen-Related Donors in IGBTs
Korzenietz, Andreas, Hille, Frank, Niedernostheide, Franz-Josef, Sandow, Christian, Wachutka, Gerhard, Schrag, GabrieleYear:
2019
Language:
english
DOI:
10.1109/sispad.2019.8870353
File:
PDF, 893 KB
english, 2019