[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - TCAD Simulations Combined with Free Carrier Absorption Experiments Revealing the Physical Nature of Hydrogen-Related Donors in IGBTs

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