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[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells
Fiorentini, Simone, Orio, Roberto, Goes, Wolfgang, Ender, Johannes, Sverdlov, ViktorYear:
2019
Language:
english
DOI:
10.1109/sispad.2019.8870359
File:
PDF, 414 KB
english, 2019