Low Temperature Selective Growth of Heavily Boron‐Doped...

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physica status solidi (a) 2019 / 10

Low Temperature Selective Growth of Heavily Boron‐Doped Germanium Source / Drain Layers for Advanced pMOS Devices

Porret, Clement, Vohra, Anurag, Nakazaki, Nobuya, Hikavyy, Andriy, Douhard, Bastien, Meersschaut, Johan, Bogdanowicz, Janusz, Rosseel, Erik, Pourtois, Geoffrey, Langer, Robert, Loo, Roger
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Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201900628
Date:
October, 2019
File:
PDF, 468 KB
english, 2019
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