[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - TCAD Model for Ag-GeSe 3 -Ni CBRAM Devices
Muthuseenu, Kiraneswar, Hylin, E. Carl, Barnaby, Hugh J., Apsangi, Priyanka, Kozicki, Michael N., Schlenvogt, Garrett, Townsend, MarkYear:
2019
Language:
english
DOI:
10.1109/sispad.2019.8870539
File:
PDF, 438 KB
english, 2019