[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Defect creation and Diffusion under electric fields from first-principles: the prototypical case of silicon dioxide
Salles, N., Martin-Samos, L., de Gironcoli, S., Giacomazzi, L., Valant, M., Hemeryck, A., Blaise, P., Sklenard, B., Richard, N.Year:
2019
Language:
english
DOI:
10.1109/sispad.2019.8870555
File:
PDF, 285 KB
english, 2019