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[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors
Medina-Bailon, Cristina, Dutta, Tapas, Klupfel, Fabian, Barraud, Sylvain, Georgiev, Vihar, Lorenz, Jurgen, Asenov, AsenYear:
2019
Language:
english
DOI:
10.1109/sispad.2019.8870556
File:
PDF, 1.53 MB
english, 2019