[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Polarization Effect Induced by Discrete Impurity at Semiconductor/Oxide Interface in Si-FinFET
Yoshida, Katsuhisa, Tsukahara, Kohei, Sano, NobuyukiYear:
2019
Language:
english
DOI:
10.1109/sispad.2019.8870564
File:
PDF, 189 KB
english, 2019