Finite Element Stress Model of Direct Band Gap Ge...

Advances in Condensed Matter Physics 2019 / 09 Vol. 2019

Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process

Xue, Xiaohuan, Song, Jianjun, Xuan, Rongxi
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Volume:
2019
Language:
english
Journal:
Advances in Condensed Matter Physics
DOI:
10.1155/2019/2096854
Date:
September, 2019
File:
PDF, 4.15 MB
english, 2019
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