SiCN:H thin films deposited by MW‐PECVD with liquid...

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Plasma Processes and Polymers 2019 / 11

SiCN:H thin films deposited by MW‐PECVD with liquid organosilicon precursor: Gas ratio influence versus properties of the deposits

Plujat, Béatrice, Glénat, Hervé, Bousquet, Angélique, Frézet, Lawrence, Hamon, Jonathan, Goullet, Antoine, Tomasella, Éric, Hernandez, Emmanuel, Quoizola, Sébastien, Thomas, Laurent
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Language:
english
Journal:
Plasma Processes and Polymers
DOI:
10.1002/ppap.201900138
Date:
November, 2019
File:
PDF, 1.46 MB
english, 2019
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