Investigation on the Degradation Mechanism for SiC Power MOSFETs under Repetitive Switching Stress
Wei, Jiaxing, Liu, Siyang, Lou, Rongcheng, Tang, Lizhi, Ye, Ran, Zhang, Long, Zhang, Xiaobing, Sun, Weifeng, Bai, SongYear:
2019
Language:
english
Journal:
IEEE Journal of Emerging and Selected Topics in Power Electronics
DOI:
10.1109/JESTPE.2019.2948836
File:
PDF, 1.47 MB
english, 2019