Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar + ion implantation using oil-immersion Raman spectroscopy
Yamamoto, Shotaro, Kosemura, Daisuke, Takeuchi, Kazuma, Ishihara, Seiya, Sawano, Kentarou, Nohira, Hiroshi, Ogura, AtsushiVolume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.051301
Date:
May, 2017
File:
PDF, 824 KB
english, 2017