Suppressing the Initial Growth of Sidewall GaN by Modifying...

ECS Journal of Solid State Science and Technology 2020 Vol. 9; Iss. 1

Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant

Hsu, Wen-Yang, Kuo, Yen-Ting, Hung, Shang-Shih, Wu, Pei-Yu, Sheu, Jinn-Kong, Lin, Kun-Lin, Wu, YewChung Sermon
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Volume:
9
Year:
2020
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0182001jss
File:
PDF, 781 KB
english, 2020
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