Study on Dislocation Behaviors during PVT Growth of 4H-SiC

Materials Science Forum 2019 / 7 Vol. 963

Study on Dislocation Behaviors during PVT Growth of 4H-SiC

Yeo, Im Gyu, Eun, Tai Hee, Kim, Jang Yul, Lee, Seung Suk, Seo, Han Seok, Chun, Myong Chuel
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Volume:
963
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.963.64
Date:
July, 2019
File:
PDF, 3.79 MB
english, 2019
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