Electrically stimulated synaptic resistive switch in...

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Electrically stimulated synaptic resistive switch in solution-processed silicon nanocrystal thin film: formation mechanism of oxygen vacancy filament for synaptic function

kawauchi, takeshi, Kano, Shinya, Fujii, Minoru
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Language:
english
Journal:
ACS Applied Electronic Materials
DOI:
10.1021/acsaelm.9b00625
Date:
November, 2019
File:
PDF, 2.39 MB
english, 2019
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