Electrically stimulated synaptic resistive switch in solution-processed silicon nanocrystal thin film: formation mechanism of oxygen vacancy filament for synaptic function
kawauchi, takeshi, Kano, Shinya, Fujii, MinoruLanguage:
english
Journal:
ACS Applied Electronic Materials
DOI:
10.1021/acsaelm.9b00625
Date:
November, 2019
File:
PDF, 2.39 MB
english, 2019