An extremely fast, energy-efficient RESET process in...

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Semiconductor Science and Technology 2019 / 11

An extremely fast, energy-efficient RESET process in Ge2Sb2Te5 phase change memory device revealed by the choice of electrode materials and interface effects

Durai, SURESH, Raj, Srinivasan, Manivannan, Anbarasu
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab591a
Date:
November, 2019
File:
PDF, 780 KB
english, 2019
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