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Erratum: “InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al$_{2}$O$_{3}$ Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/$\mu$m”
Terao, Ryousuke, Kanazawa, Toru, Ikeda, Shunsuke, Yonai, Yoshiharu, Kato, Atsushi, Miyamoto, YasuyukiVolume:
4
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.4.099202
Date:
August, 2011
File:
PDF, 722 KB
english, 2011