Reliable and high performance asymmetric FinFET SRAM cell...

Microelectronics Reliability 2020 / 01 Vol. 104

Reliable and high performance asymmetric FinFET SRAM cell using back-gate control

Niaraki Asli, Rahebeh, Taghipour, Shiva
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Volume:
104
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2019.113545
Date:
January, 2020
File:
PDF, 2.89 MB
english, 2020
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