Interface and electrical properties of buried InGaAs channel MOSFET with an InP barrier layer and Al2O3/HfO2/Al2O3 gate dielectrics
Li, Yue, Chen, Yonghe, Sun, Tangyou, Zhang, Fabi, Cao, Mingmin, Li, Qi, Fu, Tao, Xiao, Gongli, Liu, Yingbo, liu, honggang, Li, haiouLanguage:
english
Journal:
Applied Physics Express
DOI:
10.7567/1882-0786/ab5acf
Date:
November, 2019
File:
PDF, 994 KB
english, 2019