Achieving homogeneity of InGaN/GaN quantum well by...

Applied Surface Science 2019 / 11

Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment

Peng, Liyuan, Zhao, Degang, Zhu, Jianjun, Wang, Wenjie, Liang, Feng, Jiang, Desheng, Liu, Zongshun, Chen, Ping, Yang, Jing, Liu, Shuangtao, Xing, Yao, Zhang, Liqun
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Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2019.144283
Date:
November, 2019
File:
PDF, 8.30 MB
english, 2019
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