Epitaxial Growth of High‐Quality AlGaInAs‐based Active Structures on a Directly‐Bonded InP‐SiO 2 /Si Substrate
Besançon, Claire, Vaissiere, Nicolas, Dupré, Cécilia, Fournel, Frank, Sanchez, Loic, Jany, Christophe, David, Sylvain, Bassani, Franck, Baron, Thierry, Decobert, JeanLanguage:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201900523
Date:
November, 2019
File:
PDF, 521 KB
english, 2019