Solid-State Carbon-Doped GaN Schottky Diodes by Controlling...

  • Main
  • 2019 / 11
  • Solid-State Carbon-Doped GaN Schottky Diodes by Controlling...
ACS Applied Materials & Interfaces 2019 / 11

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

Ke, Wen-Cheng, Tesfay, Solomun Teklahymanot, Seong, Tae-Yeon, Liang, Zhong-Yi, Chiang, Chih-Yung, Chen, Chieh-Yi, Son, Widi, Chang, Kuo-Jen, Lin, Jia-Ching
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.9b18976
Date:
November, 2019
File:
PDF, 1.58 MB
english, 2019
Conversion to is in progress
Conversion to is failed