Next-Generation Ultrahigh-Density 3-D Vertical Resistive...

IEEE Transactions on Electron Devices 2019 / 12 Vol. 66; Iss. 12

Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)—Part I: Accurate and Computationally Efficient Modeling

Qin, Shengjun, Jiang, Zizhen, Li, Haitong, Fujii, Shosuke, Lee, Dongjin, Wong, S. Simon, Wong, H.-S. Philip
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Volume:
66
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2950606
Date:
December, 2019
File:
PDF, 2.72 MB
english, 2019
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