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IEEE Electron Device Letters 2019

Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs

Chung, Chia-Che, Ye, Hung-Yu, Lin, H. H., Wan, W. K., Yang, M.-T., Liu, C. W.
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Year:
2019
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2945474
File:
PDF, 706 KB
2019
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