Ionic Glass–Gated 2D Material–Based Phototransistor: MoSe...

Advanced Functional Materials 2019 / 12 Vol. 29; Iss. 49

Ionic Glass–Gated 2D Material–Based Phototransistor: MoSe 2 over LaF 3 as Case Study

Noumbé, Ulrich Nguétchuissi, Gréboval, Charlie, Livache, Clément, Brule, Thibault, Doudin, Bernard, Ouerghi, Abdelkarim, Lhuillier, Emmanuel, Dayen, Jean‐Francois
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Volume:
29
Journal:
Advanced Functional Materials
DOI:
10.1002/adfm.201907462
Date:
December, 2019
File:
PDF, 73 KB
2019
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