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Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultra‐Pure GaN/AlGaN Heterostructures
Schmult, Stefan, Wirth, Steffen, Solovyev, Victor V., Hentschel, Rico, Wachowiak, Andre, Scheinert, Tobias, Großer, Andreas, Kukushkin, Igor V., Mikolajick, ThomasLanguage:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201900732
Date:
December, 2019
File:
PDF, 369 KB
english, 2019