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Improvement of transconductance and cut-off frequency in $$\hbox {In}_{0.1}\hbox {Ga}_{0.9}\hbox {N}$$In0.1Ga0.9N back-barrier-based double-channel Al$$_{0.3}$$0.3Ga$$_{0.7}$$0.7N / GaN high electron mobility transistor by enhancing the drain source contact length ratio
Mohapatra, Rachita, Dutta, PradiptaVolume:
94
Language:
english
Journal:
Pramana
DOI:
10.1007/s12043-019-1866-4
Date:
December, 2020
File:
PDF, 2.54 MB
english, 2020