High quality GaAs epitaxially grown on Si(001) substrate...

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Solid-State Electronics 2019 / 12

High quality GaAs epitaxially grown on Si(001) substrate through AlAs nucleation and thermal cycle annealing

Ko, Young-Ho, Kim, Kap-Joong, Hee Baek, Ju, Young Lee, Seo, Kim, Duk-Jun, Kim, Jong-Hoi, Guim, Hwanuk, Seok Han, Won
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Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2019.107763
Date:
December, 2019
File:
PDF, 2.33 MB
english, 2019
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