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Novel multiple-selected and multiple-valued memory design using negative differential resistance circuits suitable for standard SiGe-based BiCMOS process
Kwang-Jow Gan, Cher-Shiung Tsai, Dong-Shong LiangVolume:
59
Language:
english
Pages:
7
DOI:
10.1007/s10470-008-9216-3
Date:
May, 2009
File:
PDF, 483 KB
english, 2009