Creation of Si quantum dots in a silica matrix due to...

Creation of Si quantum dots in a silica matrix due to conversion of radiation defects under pulsed ion-beam exposure

Zatsepin, A. F., Kuznetsova, Yu. A., Wong, C. H.
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Volume:
21
Year:
2019
Language:
english
Journal:
Physical Chemistry Chemical Physics
DOI:
10.1039/c9cp04715h
File:
PDF, 3.01 MB
english, 2019
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