Resistive switching in a LaMnO 3 + δ...

Journal of Applied Physics 2019 / 12 Vol. 126; Iss. 22

Resistive switching in a LaMnO 3 + δ /TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy

Meunier, Benjamin, Martinez, Eugénie, Rodriguez-Lamas, Raquel, Pla, Dolors, Burriel, Mònica, Boudard, Michel, Jiménez, Carmen, Rueff, Jean-Pascal, Renault, Olivier
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Volume:
126
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5125420
Date:
December, 2019
File:
PDF, 2.22 MB
english, 2019
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