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Low temperature electron mobility exceeding 10 4 cm 2 /V s in MOCVD grown β -Ga 2 O 3
Alema, Fikadu, Zhang, Yuewei, Osinsky, Andrei, Valente, Nicholas, Mauze, Akhil, Itoh, Takeki, Speck, James S.Volume:
7
Language:
english
Journal:
APL Materials
DOI:
10.1063/1.5132954
Date:
December, 2019
File:
PDF, 2.21 MB
english, 2019