A contrivance of 277 nm DUV LD with B 0.313...

Journal of Semiconductors 2019 / 12 Vol. 40; Iss. 12

A contrivance of 277 nm DUV LD with B 0.313 Ga 0.687 N/B 0.40 Ga 0.60 N QWs and Al x Ga 1– x N heterojunction grown on AlN substrate

Niass, Mussaab I., Sharif, Muhammad Nawaz, Wang, Yifu, Lu, Zhengqian, Chen, Xue, Qu, Yipu, Du, Zhongqiu, Wang, Fang, Liu, Yuhuai
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Volume:
40
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/40/12/122802
Date:
December, 2019
File:
PDF, 380 KB
english, 2019
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