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Design and Analysis of Heterojunction Tunneling Transistor (HETT) based Standard 6T SRAM Cell
Satyanarayana, B. V. V., Durga Prakash, M.Volume:
7
Language:
english
Journal:
International Journal of Engineering & Technology
DOI:
10.14419/ijet.v7i3.29.18450
Date:
August, 2018
File:
PDF, 394 KB
english, 2018