[IEEE 2019 Silicon Nanoelectronics Workshop (SNW) - Kyoto, Japan (2019.6.9-2019.6.10)] 2019 Silicon Nanoelectronics Workshop (SNW) - Effect of TiO x Film Thickness on Resistive Switching Behavior of TiN/TiO x /HfO 2 /Pt RRAM Device
Ding, Xiangxiang, Liu, Lifeng, Feng, Yulin, Huang, PengYear:
2019
Language:
english
DOI:
10.23919/snw.2019.8782976
File:
PDF, 1005 KB
english, 2019