Vertical Sandwich Gate-All-Around Field-Effect Transistors...

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IEEE Electron Device Letters 2019

Vertical Sandwich Gate-All-Around Field-Effect Transistors with Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

Yin, Xiaogen, Xie, L., Ai, X.Z., Zhang, Y.B., Jia, K.P., Wu, Z.H., Ma, X.L., Zhang, Q.Z., Mao, S.J., Xiang, J.J., Gao, J.F., Zhu, Huilong, He, X.B., Bai, G.B., Lu, Y.H., Zhou, N., Kong, Z.Z., Zhang, Y
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Year:
2019
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2954537
File:
PDF, 1.19 MB
2019
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