Power and temperature dependent photoluminescence...

Japanese Journal of Applied Physics 2019 / 12

Power and temperature dependent photoluminescence investigation of the carrier localization at inverted interface transitions in InAlAs/InP structures

smiri, badreddine, Saidi, Faouzi, Mlayah, Adnen, Maaref, Hassen
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Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab65a6
Date:
December, 2019
File:
PDF, 2.83 MB
english, 2019
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