Effects of boron doping on non-linear properties of SOI...

Solid-State Electronics 2020 / 02 Vol. 164

Effects of boron doping on non-linear properties of SOI with embedded polycrystalline silicon layer for RF applications

Wei, Xing, Zhu, Lei, Chang, Yongwei, Gao, Nan, Su, Xin, Dong, Yemin, Fei, Lu
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Volume:
164
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2019.107677
Date:
February, 2020
File:
PDF, 969 KB
english, 2020
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