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Effects of boron doping on non-linear properties of SOI with embedded polycrystalline silicon layer for RF applications
Wei, Xing, Zhu, Lei, Chang, Yongwei, Gao, Nan, Su, Xin, Dong, Yemin, Fei, LuVolume:
164
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2019.107677
Date:
February, 2020
File:
PDF, 969 KB
english, 2020